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APTGF300A120
Phase leg NPT IGBT Power Module
VCES = 1200V IC = 300A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
G1 E1
VBUS
0/VBUS
OUT
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Tc = 25C Tj = 150C
V W
600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGF300A120 - Rev 1 March, 2004
Continuous Collector Current
Tc = 25C Tc = 80C Tc = 25C
Max ratings 1200 400 300 800 20 2080
Unit V A
APTGF300A120
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 4mA VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 300A Tj = 125C VGE = VCE, IC = 12mA VGE = 20V, VCE = 0V Min
1200
Typ 0.4 25 3.3 4
Max 6 3.9 6.5 1
Unit V mA V V A
4.5
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (125C) VGE = 15V VBus = 600V IC = 300A RG = 2
Min
Typ 21 2.9 1.52 70 50 500 30 17 18
Max
Unit nF
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic IF(AV) VF Qrr Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Charge
Test Conditions
50% duty cycle
Min Tc = 85C
Typ 250 2.2 2.4 2.2 13 40
Max 2.5
Unit A V C
IF = 300A IF = 400A IF = 400A IF = 300A
Tj = 150C Tj = 25C Tj = 125C
APT website - http://www.advancedpower.com
2-5
APTGF300A120 - Rev 1 March, 2004
APTGF300A120
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Mounting torque For terminals Package Weight IGBT Diode 2500 -40 -40 -40 3 2 150 125 100 5 3.5 280 Min Typ Max 0.06 0.13 Unit C/W V C N.m g
M6 M5
Package outline
APT website - http://www.advancedpower.com
3-5
APTGF300A120 - Rev 1 March, 2004
APTGF300A120
Typical Performance Curve
Output characteristics (VGE=15V) 450 Ic, Collector current (A) Ic, Collector current (A) 400 350 300 250 200 150 100 50 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics
250s Pulse Test < 0.5% Duty cycle 250s Pulse Test < 0.5% Duty cycle
Output characteristics (VGE=10V) 350 300 250 200 150 100 50 0 4 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 300A TJ = 25 C VCE=600V 4 TJ=125 C
250s Pulse Test < 0.5% Duty cycle
TJ=25 C
TJ=25C
TJ=125 C
500 400 300 200 100 0 4
VGE, Gate to Emitter Voltage (V)
600 Ic, Collector Current (A)
20 16 12 8 4 0
0 500
VCE=800V
6 8 10 VGE, Gate to Emitter Voltage (V)
12
1000 1500 2000 Gate Charge (nC)
2500
1000
Switching times vs collector current
100
C, Capacitance (nF)
Capacitance vs Collector to Emitter Voltage
tdoff
VCE = 600V VGE=15V RG=2 TJ = 125C
Cies 10 Coes Cres
time (ns)
100
tdon tf
tr
10 0 100 200 300 Ic, Collector current (A) 400
1 0
VCE, Collector to Emitter Voltage (V)
10
20
30
Switching energy losses vs Gate resistance 120 Switching Energy losses (mJ)
DC Collector Current vs Case Temperature 400 Ic, DC Collector Current (A) 350 300 250 150 100 50 0 0 25 50 75 100 125 TC, Case Temperature (C) 150 200
100 80 60 40 20 0 0
VCE = 600V VGE=15V IC=300A TJ = 125C
Eon
Eoff
2
4 6 8 10 12 Gate resistance (Ohms)
14
16
APT website - http://www.advancedpower.com
4-5
APTGF300A120 - Rev 1 March, 2004
APTGF300A120
Minimum Switching Safe Operating Area 700 IC, Collector current (A) 600 500 400 300 200 100 0 0 300 600 900 1200 1500 VCE, Collector to Emitter Voltage (V) 10 0 5 10 15 Gate resistance (Ohms) 20 1000 tdon 100 tr tf 10000 Switching times vs gate resistor VCE = 600V, VGE=15V IC=300A, TJ = 125C time (ns) tdoff
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10
0.1 0.05 0 0.00001
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60 40 20 0 50 100 150 200 250 300 350 IC, Collector Current (A) 400 VCE = 800V D = 50% RG = 2 TJ = 125C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTGF300A120 - Rev 1 March, 2004

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